Design of Ternary Content-Addressable Memories with Dynamically Power-gated Storage Cells Using FinFETs
An independent-gate FinFET can operate in two modes: SG (shorted-gate) and IG (independent-gate) modes, and thus a FinFET-based circuit offers rich design options for lower power, better performance or reduced transistor count. In this paper, we present two novel dynamically power-gated FinFET TCAM...
| Main Authors: | , , |
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| Format: | Article |
| Language: | English |
| Published: |
University of Banja Luka
2016-06-01
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| Series: | Electronics |
| Subjects: | |
| Online Access: | http://electronics.etfbl.net/journal/Vol20No1/xPaper_02.pdf |