Thin dysprosium oxide films formed by rapid thermal annealing on porous SiC substrate
In this paper, we consider the effect of rapid thermal annealing (RTA) on the properties of Dy 2 O 3 film formed on the surface of a substrate with a por-SiC/SiC structure. The atomic composition of the films under study was analyzed as a function of the RTA time. It is shown that the RTA method mak...
| Main Authors: | , , , , , , |
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| Format: | Article |
| Language: | English |
| Published: |
National Academy of Sciences of Ukraine. Institute of Semi conductor physics.
2018-12-01
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| Series: | Semiconductor Physics, Quantum Electronics & Optoelectronics |
| Subjects: | |
| Online Access: | http://journal-spqeo.org.ua/n4_2018/P360-364abstr.html |