Hydrogen and Methane Response of Pd Gate MOS Sensor
A sensor based on Pd/SiO2/Si MOS capacitor was fabricated on p type <100> (1-6 ΩCm) Si with thermal oxide layer of thickness about 33Ǻ. Sensor properties of the MOS structure were studied towards hydrogen (500- 3500 ppm in air) and methane gas (1000-2500 ppm in air) at room temperature and 14...
| Main Authors: | , , , |
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| Format: | Article |
| Language: | English |
| Published: |
IFSA Publishing, S.L.
2009-04-01
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| Series: | Sensors & Transducers |
| Subjects: | |
| Online Access: | http://www.sensorsportal.com/HTML/DIGEST/april_09/P_424.pdf |