Quantitative analysis and modeling of line edge roughness in near-field lithography: toward high pattern quality in nanofabrication

Quantitative analysis and modeling of line edge roughness in near-field lithography: toward high pattern quality in nanofabrication

Quantitative analysis of line edge roughness (LER) is very important for understanding the root causes of LER and thereby improving the pattern quality in near-field lithography (NFL), because LER has become the main limiter of critical dimension (CD) control as the feature size of nanostructures is...

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Bibliographic Details
Main Authors: Han Dandan, Park Changhoon, Oh Seonghyeon, Jung Howon, Hahn Jae W.
Format: Article
Language:English
Published: De Gruyter 2019-04-01
Series:Nanophotonics
Subjects:
line edge roughness
near-field lithography
surface plasmon waves
image log-slope
resist contrast
point-spread function
Online Access:https://doi.org/10.1515/nanoph-2019-0031

Internet

https://doi.org/10.1515/nanoph-2019-0031

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