Dynamics Studies of Nitrogen Interstitial in GaN from Ab Initio Calculations

Dynamics Studies of Nitrogen Interstitial in GaN from Ab Initio Calculations

Understanding the properties of defects is crucial to design higher performance semiconductor materials because they influence the electronic and optical properties significantly. Using ab initio calculations, the dynamics properties of nitrogen interstitial in GaN material, including the configurat...

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Bibliographic Details
Main Authors: Huan He, Wenbo Liu, Pengbo Zhang, Wenlong Liao, Dayin Tong, Lin Yang, Chaohui He, Hang Zang, Hongxiang Zong
Format: Article
Language:English
Published: MDPI AG 2020-08-01
Series:Materials
Subjects:
ab initio calculation
nitrogen interstitial
migration
rotation
Frenkel pair
Online Access:https://www.mdpi.com/1996-1944/13/16/3627

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https://www.mdpi.com/1996-1944/13/16/3627

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