Cathodoluminescence of silicon doped aluminum nitride with scanning transmission electron microscopy
Here, we apply cathodoluminescence in scanning transmission electron microscopy to infer the influence of dislocation strain fields on the formation of point defect complexes in Si doped AlN. In addition to identifying non-radiative recombination centers, tracking Si related defect emission energies...
| Main Authors: | , , , , , , |
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| Format: | Article |
| Language: | English |
| Published: |
AIP Publishing LLC
2020-09-01
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| Series: | APL Materials |
| Online Access: | http://dx.doi.org/10.1063/5.0019863 |