Co2FeAl based magnetic tunnel junctions with BaO and MgO/BaO barriers

We succeed to integrate BaO as a tunneling barrier into Co2FeAl based magnetic tunnel junctions (MTJs). By means of Auger electron spectroscopy it could be proven that the applied annealing temperatures during BaO deposition and afterwards do not cause any diffusion of Ba neither into the lower Heus...

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Bibliographic Details
Main Authors: J. Rogge, W. Hetaba, J. Schmalhorst, H. Bouchikhaoui, P. Stender, D. Baither, G. Schmitz, A. Hütten
Format: Article
Language:English
Published: AIP Publishing LLC 2015-07-01
Series:AIP Advances
Online Access:http://dx.doi.org/10.1063/1.4927638