Area-Efficient and Snapback-Free SOI LIGBT With L-Shaped Extraction Path
A novel area-efficient snapback-free silicon-on-insulator lateral insulated gate bipolar transistor (SOI-LIGBT) is proposed and investigated for the first time in this paper. The device features an N+ anode, three separated P+ anodes, and a P-buried layer (PBL) in the N-buffer of the anode region. T...
| Main Authors: | , , , , , |
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| Format: | Article |
| Language: | English |
| Published: |
IEEE
2019-01-01
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| Series: | IEEE Journal of the Electron Devices Society |
| Subjects: | |
| Online Access: | https://ieeexplore.ieee.org/document/8772138/ |