Enhancement of spin signals by thermal annealing in silicon-based lateral spin valves

The effect of thermal annealing on spin accumulation signals in silicon (Si)-based lateral spin devices is investigated. The annealing is carried out after fabrication of the spin devices, which allows us to directly compare the spin-related phenomena before and after annealing. The magnitude of non...

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Bibliographic Details
Main Authors: N. Yamashita, S. Lee, R. Ohshima, E. Shigematsu, H. Koike, Y. Suzuki, S. Miwa, M. Goto, Y. Ando, M. Shiraishi
Format: Article
Language:English
Published: AIP Publishing LLC 2020-09-01
Series:AIP Advances
Online Access:http://dx.doi.org/10.1063/5.0022160