A Study on the Thermomechanical Reliability Risks of Through-Silicon-Vias in Sensor Applications
Reliability risks for two different types of through-silicon-vias (TSVs) are discussed in this paper. The first is a partially-filled copper TSV, if which the copper layer covers the side walls and bottom. A polymer is used to fill the rest of the cavity. Stresses in risk sites are studied and ranke...
Main Authors: | Shuai Shao, Dapeng Liu, Yuling Niu, Kathy O’Donnell, Dipak Sengupta, Seungbae Park |
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Format: | Article |
Language: | English |
Published: |
MDPI AG
2017-02-01
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Series: | Sensors |
Subjects: | |
Online Access: | http://www.mdpi.com/1424-8220/17/2/322 |
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