A Study on the Thermomechanical Reliability Risks of Through-Silicon-Vias in Sensor Applications

Reliability risks for two different types of through-silicon-vias (TSVs) are discussed in this paper. The first is a partially-filled copper TSV, if which the copper layer covers the side walls and bottom. A polymer is used to fill the rest of the cavity. Stresses in risk sites are studied and ranke...

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Bibliographic Details
Main Authors: Shuai Shao, Dapeng Liu, Yuling Niu, Kathy O’Donnell, Dipak Sengupta, Seungbae Park
Format: Article
Language:English
Published: MDPI AG 2017-02-01
Series:Sensors
Subjects:
TSV
Online Access:http://www.mdpi.com/1424-8220/17/2/322

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