A Study on the Thermomechanical Reliability Risks of Through-Silicon-Vias in Sensor Applications

A Study on the Thermomechanical Reliability Risks of Through-Silicon-Vias in Sensor Applications

Reliability risks for two different types of through-silicon-vias (TSVs) are discussed in this paper. The first is a partially-filled copper TSV, if which the copper layer covers the side walls and bottom. A polymer is used to fill the rest of the cavity. Stresses in risk sites are studied and ranke...

Full description

Bibliographic Details
Main Authors: Shuai Shao, Dapeng Liu, Yuling Niu, Kathy O’Donnell, Dipak Sengupta, Seungbae Park
Format: Article
Language:English
Published: MDPI AG 2017-02-01
Series:Sensors
Subjects:
MEMS packaging
optical sensor
TSV
reliability
finite element analysis (FEA)
fracture mechanics
Online Access:http://www.mdpi.com/1424-8220/17/2/322
id doaj-0e4a36c0284847ddb3e3aad1f38930c4
record_format Article
spelling doaj-0e4a36c0284847ddb3e3aad1f38930c42020-11-24T23:51:48ZengMDPI AGSensors1424-82202017-02-0117232210.3390/s17020322s17020322A Study on the Thermomechanical Reliability Risks of Through-Silicon-Vias in Sensor ApplicationsShuai Shao0Dapeng Liu1Yuling Niu2Kathy O’Donnell3Dipak Sengupta4Seungbae Park5Department of Mechanical Engineering, State University of New York at Binghamton, P.O. Box 6000, Binghamton, NY 13902, USADepartment of Mechanical Engineering, State University of New York at Binghamton, P.O. Box 6000, Binghamton, NY 13902, USADepartment of Mechanical Engineering, State University of New York at Binghamton, P.O. Box 6000, Binghamton, NY 13902, USAAnalog Devices, Inc., Wilmington, MA 01887, USAAnalog Devices, Inc., Wilmington, MA 01887, USADepartment of Mechanical Engineering, State University of New York at Binghamton, P.O. Box 6000, Binghamton, NY 13902, USAReliability risks for two different types of through-silicon-vias (TSVs) are discussed in this paper. The first is a partially-filled copper TSV, if which the copper layer covers the side walls and bottom. A polymer is used to fill the rest of the cavity. Stresses in risk sites are studied and ranked for this TSV structure by FEA modeling. Parametric studies for material properties (modulus and thermal expansion) of TSV polymer are performed. The second type is a high aspect ratio TSV filled by polycrystalline silicon (poly Si). Potential risks of the voids in the poly Si due to filling defects are studied. Fracture mechanics methods are utilized to evaluate the risk for two different assembly conditions: package assembled to printed circuit board (PCB) and package assembled to flexible substrate. The effect of board/substrate/die thickness and the size and location of the void are discussed.http://www.mdpi.com/1424-8220/17/2/322MEMS packagingoptical sensorTSVreliabilityfinite element analysis (FEA)fracture mechanics
collection DOAJ
language English
format Article
sources DOAJ
author Shuai Shao
Dapeng Liu
Yuling Niu
Kathy O’Donnell
Dipak Sengupta
Seungbae Park
spellingShingle Shuai Shao
Dapeng Liu
Yuling Niu
Kathy O’Donnell
Dipak Sengupta
Seungbae Park
A Study on the Thermomechanical Reliability Risks of Through-Silicon-Vias in Sensor Applications
Sensors
MEMS packaging
optical sensor
TSV
reliability
finite element analysis (FEA)
fracture mechanics
author_facet Shuai Shao
Dapeng Liu
Yuling Niu
Kathy O’Donnell
Dipak Sengupta
Seungbae Park
author_sort Shuai Shao
title A Study on the Thermomechanical Reliability Risks of Through-Silicon-Vias in Sensor Applications
title_short A Study on the Thermomechanical Reliability Risks of Through-Silicon-Vias in Sensor Applications
title_full A Study on the Thermomechanical Reliability Risks of Through-Silicon-Vias in Sensor Applications
title_fullStr A Study on the Thermomechanical Reliability Risks of Through-Silicon-Vias in Sensor Applications
title_full_unstemmed A Study on the Thermomechanical Reliability Risks of Through-Silicon-Vias in Sensor Applications
title_sort study on the thermomechanical reliability risks of through-silicon-vias in sensor applications
publisher MDPI AG
series Sensors
issn 1424-8220
publishDate 2017-02-01
description Reliability risks for two different types of through-silicon-vias (TSVs) are discussed in this paper. The first is a partially-filled copper TSV, if which the copper layer covers the side walls and bottom. A polymer is used to fill the rest of the cavity. Stresses in risk sites are studied and ranked for this TSV structure by FEA modeling. Parametric studies for material properties (modulus and thermal expansion) of TSV polymer are performed. The second type is a high aspect ratio TSV filled by polycrystalline silicon (poly Si). Potential risks of the voids in the poly Si due to filling defects are studied. Fracture mechanics methods are utilized to evaluate the risk for two different assembly conditions: package assembled to printed circuit board (PCB) and package assembled to flexible substrate. The effect of board/substrate/die thickness and the size and location of the void are discussed.
topic MEMS packaging
optical sensor
TSV
reliability
finite element analysis (FEA)
fracture mechanics
url http://www.mdpi.com/1424-8220/17/2/322
work_keys_str_mv AT shuaishao astudyonthethermomechanicalreliabilityrisksofthroughsiliconviasinsensorapplications
AT dapengliu astudyonthethermomechanicalreliabilityrisksofthroughsiliconviasinsensorapplications
AT yulingniu astudyonthethermomechanicalreliabilityrisksofthroughsiliconviasinsensorapplications
AT kathyodonnell astudyonthethermomechanicalreliabilityrisksofthroughsiliconviasinsensorapplications
AT dipaksengupta astudyonthethermomechanicalreliabilityrisksofthroughsiliconviasinsensorapplications
AT seungbaepark astudyonthethermomechanicalreliabilityrisksofthroughsiliconviasinsensorapplications
AT shuaishao studyonthethermomechanicalreliabilityrisksofthroughsiliconviasinsensorapplications
AT dapengliu studyonthethermomechanicalreliabilityrisksofthroughsiliconviasinsensorapplications
AT yulingniu studyonthethermomechanicalreliabilityrisksofthroughsiliconviasinsensorapplications
AT kathyodonnell studyonthethermomechanicalreliabilityrisksofthroughsiliconviasinsensorapplications
AT dipaksengupta studyonthethermomechanicalreliabilityrisksofthroughsiliconviasinsensorapplications
AT seungbaepark studyonthethermomechanicalreliabilityrisksofthroughsiliconviasinsensorapplications
_version_ 1725476040598355968

Similar Items