Effect of self-heating on electrical characteristics of AlGaN/ GaN HEMT on Si (111) substrate
In order to study the effect of self-heating of AlGaN/ GaN high electron mobility transistors (HEMTs) characteristics fabricated on Si(111) substrate, simulations of 2DEG temperature on different drain voltages have been carried out by Sentaurus TCAD simulator tool. Prior to the electrical direct-cu...
| Main Authors: | , , , , , |
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| Format: | Article |
| Language: | English |
| Published: |
AIP Publishing LLC
2017-08-01
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| Series: | AIP Advances |
| Online Access: | http://dx.doi.org/10.1063/1.4990868 |