Conduction band offset-dependent induced threshold voltage shifts in a-InGaZnO TFTs under positive bias illumination stress

Conduction band offset-dependent induced threshold voltage shifts in a-InGaZnO TFTs under positive bias illumination stress

In this paper, the dependence of threshold voltage (Vth) changes to amorphous-indium gallium zinc oxide (a-IGZO) thin film transistors (TFTs) under positive bias light illumination (PBIS) on the height of the conduction band offset was studied. Using SiO2, HfO2, and Al2O3 as gate dielectrics, three...

Full description

Bibliographic Details
Main Authors: Hyojung Kim, Soonkon Kim, Jongmin Yoo, Changyong Oh, Bosung Kim, Hyuncheol Hwang, Jungmin Park, Pyungho Choi, Jangkun Song, Kiju Im, Byoungdeog Choi
Format: Article
Language:English
Published: AIP Publishing LLC 2021-03-01
Series:AIP Advances
Online Access:http://dx.doi.org/10.1063/5.0035379

Internet

http://dx.doi.org/10.1063/5.0035379

Similar Items