Gamma-ray irradiation and post-irradiation at room and elevated temperature response of pMOS dosimeters with thick gate oxides
Gamma-ray irradiation and post-irradiation response at room and elevated temperature have been studied for radiation sensitive pMOS transistors with gate oxide thickness of 100 and 400 nm, respectively. Their response was followed based on the changes in the threshold voltage shift which was est...
| Main Authors: | , , , |
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| Format: | Article |
| Language: | English |
| Published: |
VINCA Institute of Nuclear Sciences
2011-01-01
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| Series: | Nuclear Technology and Radiation Protection |
| Subjects: | |
| Online Access: | http://www.doiserbia.nb.rs/img/doi/1451-3994/2011/1451-39941103261P.pdf |