Analysis of low frequency noise in in situ fluorine-doped ZnSnO thin-film transistors

Analysis of low frequency noise in in situ fluorine-doped ZnSnO thin-film transistors

We report on in situ fluorine-doped ZnSnO (ZTO:F) thin-film transistors (TFTs) fabricated by co-sputtering. The low frequency noise (LFN) characteristics of ZTO:F TFTs under different annealing temperatures and FSnO (FTO) deposition powers are comparatively studied for the first time. The results sh...

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Bibliographic Details
Main Authors: Xuemei Yin, Yayi Chen, Guoyuan Li, Wei Zhong, Sunbin Deng, Lei Lu, Guijun Li, Hoi Sing Kwok, Rongsheng Chen
Format: Article
Language:English
Published: AIP Publishing LLC 2021-04-01
Series:AIP Advances
Online Access:http://dx.doi.org/10.1063/5.0048125

Internet

http://dx.doi.org/10.1063/5.0048125

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