Evaluation and Reliability Assessment of GaN-on-Si MIS-HEMT for Power Switching Applications
This paper reports an extensive analysis of the physical mechanisms responsible for the failure of GaN-based metal–insulator–semiconductor (MIS) high electron mobility transistors (HEMTs). When stressed under high applied electric fields, the traps at the dielectric/III-N barrier interface and insid...
Main Authors: | , , , , , |
---|---|
Format: | Article |
Language: | English |
Published: |
MDPI AG
2017-02-01
|
Series: | Energies |
Subjects: | |
Online Access: | http://www.mdpi.com/1996-1073/10/2/233 |