Electrical isolation of dislocations in Ge layers on Si(001) substrates through CMOS-compatible suspended structures

Electrical isolation of dislocations in Ge layers on Si(001) substrates through CMOS-compatible suspended structures

Suspended crystalline Ge semiconductor structures are created on a Si(001) substrate by a combination of epitaxial growth and simple patterning from the front surface using anisotropic underetching. Geometric definition of the surface Ge layer gives access to a range of crystalline planes that have...

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Bibliographic Details
Main Author: Vishal Ajit Shah, Maksym Myronov, Chalermwat Wongwanitwatana, Lewis Bawden, Martin J Prest, James S Richardson-Bullock, Stephen Rhead, Evan H C Parker, Terrance E Whall and David R Leadley
Format: Article
Language:English
Published: Taylor & Francis Group 2012-01-01
Series:Science and Technology of Advanced Materials
Online Access:http://dx.doi.org/10.1088/1468-6996/13/5/055002

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http://dx.doi.org/10.1088/1468-6996/13/5/055002

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