Diode Characteristics of a Super-Steep Subthreshold Slope PN-Body Tied SOI-FET for Energy Harvesting Applications
In this paper, the diode characteristics of our newly proposed super-steep subthreshold slope “PN-body tied (PNBT) silicon-on-insulator field-effect transistor” are presented, and compared with conventional diodes. We report that the device possesses super-steep characteristics...
| Main Authors: | , , , , , |
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| Format: | Article |
| Language: | English |
| Published: |
IEEE
2018-01-01
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| Series: | IEEE Journal of the Electron Devices Society |
| Subjects: | |
| Online Access: | https://ieeexplore.ieee.org/document/8333692/ |