Investigation of low-resistivity from hydrogenated lightly B-doped diamond by ion implantation
We have implanted boron (B) ions (dosage: 5×1014 cm-2) into diamond and then hydrogenated the sample by implantating hydrogen ions at room temperature. A p-type diamond material with a low resistivity of 7.37 mΩ cm has been obtained in our experiment, which suggests that the hydrogenation of...
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| Format: | Article |
| Language: | English |
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Taylor & Francis Group
2008-01-01
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| Series: | Science and Technology of Advanced Materials |
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| Online Access: | http://www.iop.org/EJ/abstract/1468-6996/9/2/025014 |