Effect of AlN growth temperature on trap densities of in-situ metal-organic chemical vapor deposition grown AlN/AlGaN/GaN metal-insulator-semiconductor heterostructure field-effect transistors
The trapping properties of in-situ metal-organic chemical vapor deposition (MOCVD) grown AlN/AlGaN/GaN metal-insulator-semiconductor heterostructure field-effect transistors (MIS-HFETs) with AlN layers grown at 600 and 700 °C has been quantitatively analyzed by frequency dependent parallel conducta...
| Main Authors: | , , |
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| Format: | Article |
| Language: | English |
| Published: |
AIP Publishing LLC
2012-06-01
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| Series: | AIP Advances |
| Online Access: | http://dx.doi.org/10.1063/1.4722642 |