Optimized Design of 1 MHz Intermediate Bus Converter Using GaN HEMT for Aerospace Applications
This paper presents the possibility of using Gallium Nitride (GaN) high-electron-mobility transistors (HEMTs) instead of the conventional silicon metal oxide semiconductor field effect transistor (MOSFET) to implement a high-frequency intermediate bus converter (IBC) as part of a typical distributed...
| Main Authors: | , , , , , , |
|---|---|
| Format: | Article |
| Language: | English |
| Published: |
MDPI AG
2020-12-01
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| Series: | Energies |
| Subjects: | |
| Online Access: | https://www.mdpi.com/1996-1073/13/24/6583 |