Reliability Study of GaN-on-SiC HEMT RF Power Amplifiers

Reliability Study of GaN-on-SiC HEMT RF Power Amplifiers

The RF power amplifier demonstrators containing each one GaN-on-SiC, HEMT, CHZ015A-QEG, from UMS in SMD quad-flat no-leads package (QFN) were subjected to thermal cycles (TC) and power cycles (PC) and evaluated electrically, thermally and structurally. Two types of solders, Sn63Pb36Ag2 and lead-free...

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Bibliographic Details
Main Authors: M. Bakowski, J. Lang, J-K. Lim, J. Hellén, T.M.J. Nilsson, B. Schodt, R. Poder, I. Belov, P. Leisner
Format: Article
Language:English
Published: Taiwan Association of Engineering and Technology Innovation 2018-07-01
Series:Advances in Technology Innovation
Subjects:
GaN-on SiC
HEMT
RF power amplifier
thermo-mechanical and electrical reliability
Online Access:http://ojs.imeti.org/index.php/AITI/article/view/1020

Internet

http://ojs.imeti.org/index.php/AITI/article/view/1020

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