Etch Control and SiGe Surface Composition Modulation by Low Temperature Plasma Process for Si/SiGe Dual Channel Fin Application

Etch Control and SiGe Surface Composition Modulation by Low Temperature Plasma Process for Si/SiGe Dual Channel Fin Application

In this study, we discuss Si-SiGe etch characteristics as well as SiGe surface composition modification. It is required to etch Si and SiGe simultaneously for Si/SiGe dual channel Fin-FETs. Therefore, etch control of these two materials is desired. However, not only halogen chemistries but also phys...

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Bibliographic Details
Main Authors: Y. Ishii, Y.-J. Lee, W.-F. Wu, K. Maeda, H. Ishimura, M. Miura
Format: Article
Language:English
Published: IEEE 2019-01-01
Series:IEEE Journal of the Electron Devices Society
Subjects:
Hydrogen plasma
Si segregation
silicon germanium
interface trap density
FinFET
Online Access:https://ieeexplore.ieee.org/document/8891766/

Internet

https://ieeexplore.ieee.org/document/8891766/

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