The Resistive Switching Behavior of Al/Chitosan-Graphene Oxide/FTO Structure

The Resistive Switching Behavior of Al/Chitosan-Graphene Oxide/FTO Structure

Resistive random access memory (RRAM) is emerging as a new class of nonvolatile memory that offers promising electronic properties and simple metal-insulator-metal (MIM) structures for sandwich layers, such as organics, inorganics, and hybrid materials. Hybrid structures have attracted much interest...

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Bibliographic Details
Main Authors: Hau Huu Do Ho, Trung Minh Le, Ngoc Kim Pham
Format: Article
Language:English
Published: Hindawi Limited 2021-01-01
Series:Journal of Nanomaterials
Online Access:http://dx.doi.org/10.1155/2021/5565169

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