The Resistive Switching Behavior of Al/Chitosan-Graphene Oxide/FTO Structure
Resistive random access memory (RRAM) is emerging as a new class of nonvolatile memory that offers promising electronic properties and simple metal-insulator-metal (MIM) structures for sandwich layers, such as organics, inorganics, and hybrid materials. Hybrid structures have attracted much interest...
| Main Authors: | , , |
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| Format: | Article |
| Language: | English |
| Published: |
Hindawi Limited
2021-01-01
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| Series: | Journal of Nanomaterials |
| Online Access: | http://dx.doi.org/10.1155/2021/5565169 |