Ellipsometry and XPS comparative studies of thermal and plasma enhanced atomic layer deposited Al2O3-films

Ellipsometry and XPS comparative studies of thermal and plasma enhanced atomic layer deposited Al2O3-films

We report on results on the preparation of thin (<100 nm) aluminum oxide (Al2O3) films on silicon substrates using thermal atomic layer deposition (T-ALD) and plasma enhanced atomic layer deposition (PE-ALD) in the SENTECH SI ALD LL system. The T-ALD Al2O3 layers were deposited at 200 °C, for the...

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Bibliographic Details
Main Authors: Jörg Haeberle, Karsten Henkel, Hassan Gargouri, Franziska Naumann, Bernd Gruska, Michael Arens, Massimo Tallarida, Dieter Schmeißer
Format: Article
Language:English
Published: Beilstein-Institut 2013-11-01
Series:Beilstein Journal of Nanotechnology
Subjects:
Al2O3
ALD
ellipsometry
PE-ALD
XPS
Online Access:https://doi.org/10.3762/bjnano.4.83

Internet

https://doi.org/10.3762/bjnano.4.83

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