Formation of Al2O3-HfO2 Eutectic EBC Film on Silicon Carbide Substrate

The formation mechanism of Al2O3-HfO2 eutectic structure, the preparation method, and the formation mechanism of the eutectic EBC layer on the silicon carbide substrate are summarized. Al2O3-HfO2 eutectic EBC film is prepared by optical zone melting method on the silicon carbide substrate. At high t...

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Main Authors: Kyosuke Seya, Shunkichi Ueno, Byung-Koog Jang
Format: Article
Language:English
Published: Hindawi Limited 2015-01-01
Series:Journal of Nanomaterials
Online Access:http://dx.doi.org/10.1155/2015/318278
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spelling doaj-07a392be464745558116193cf7a449da2020-11-24T22:13:51ZengHindawi LimitedJournal of Nanomaterials1687-41101687-41292015-01-01201510.1155/2015/318278318278Formation of Al2O3-HfO2 Eutectic EBC Film on Silicon Carbide SubstrateKyosuke Seya0Shunkichi Ueno1Byung-Koog Jang2College of Engineering, Nihon University, Koriyama, Fukushima 963-8642, JapanCollege of Engineering, Nihon University, Koriyama, Fukushima 963-8642, JapanNational Institute for Materials Science, Tsukuba, Ibaraki 305-0047, JapanThe formation mechanism of Al2O3-HfO2 eutectic structure, the preparation method, and the formation mechanism of the eutectic EBC layer on the silicon carbide substrate are summarized. Al2O3-HfO2 eutectic EBC film is prepared by optical zone melting method on the silicon carbide substrate. At high temperature, a small amount of silicon carbide decomposed into silicon and carbon. The components of Al2O3 and HfO2 in molten phase also react with the free carbon. The Al2O3 phase reacts with free carbon and vapor species of AlO phase is formed. The composition of the molten phase becomes HfO2 rich from the eutectic composition. HfO2 phase also reacts with the free carbon and HfC phase is formed on the silicon carbide substrate; then a high density intermediate layer is formed. The adhesion between the intermediate layer and the substrate is excellent by an anchor effect. When the solidification process finished before all of HfO2 phase is reduced to HfC phase, HfC-HfO2 functionally graded layer is formed on the silicon carbide substrate and the Al2O3-HfO2 eutectic structure grows from the top of the intermediate layer.http://dx.doi.org/10.1155/2015/318278
collection DOAJ
language English
format Article
sources DOAJ
author Kyosuke Seya
Shunkichi Ueno
Byung-Koog Jang
spellingShingle Kyosuke Seya
Shunkichi Ueno
Byung-Koog Jang
Formation of Al2O3-HfO2 Eutectic EBC Film on Silicon Carbide Substrate
Journal of Nanomaterials
author_facet Kyosuke Seya
Shunkichi Ueno
Byung-Koog Jang
author_sort Kyosuke Seya
title Formation of Al2O3-HfO2 Eutectic EBC Film on Silicon Carbide Substrate
title_short Formation of Al2O3-HfO2 Eutectic EBC Film on Silicon Carbide Substrate
title_full Formation of Al2O3-HfO2 Eutectic EBC Film on Silicon Carbide Substrate
title_fullStr Formation of Al2O3-HfO2 Eutectic EBC Film on Silicon Carbide Substrate
title_full_unstemmed Formation of Al2O3-HfO2 Eutectic EBC Film on Silicon Carbide Substrate
title_sort formation of al2o3-hfo2 eutectic ebc film on silicon carbide substrate
publisher Hindawi Limited
series Journal of Nanomaterials
issn 1687-4110
1687-4129
publishDate 2015-01-01
description The formation mechanism of Al2O3-HfO2 eutectic structure, the preparation method, and the formation mechanism of the eutectic EBC layer on the silicon carbide substrate are summarized. Al2O3-HfO2 eutectic EBC film is prepared by optical zone melting method on the silicon carbide substrate. At high temperature, a small amount of silicon carbide decomposed into silicon and carbon. The components of Al2O3 and HfO2 in molten phase also react with the free carbon. The Al2O3 phase reacts with free carbon and vapor species of AlO phase is formed. The composition of the molten phase becomes HfO2 rich from the eutectic composition. HfO2 phase also reacts with the free carbon and HfC phase is formed on the silicon carbide substrate; then a high density intermediate layer is formed. The adhesion between the intermediate layer and the substrate is excellent by an anchor effect. When the solidification process finished before all of HfO2 phase is reduced to HfC phase, HfC-HfO2 functionally graded layer is formed on the silicon carbide substrate and the Al2O3-HfO2 eutectic structure grows from the top of the intermediate layer.
url http://dx.doi.org/10.1155/2015/318278
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AT shunkichiueno formationofal2o3hfo2eutecticebcfilmonsiliconcarbidesubstrate
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