Formation of Al2O3-HfO2 Eutectic EBC Film on Silicon Carbide Substrate
The formation mechanism of Al2O3-HfO2 eutectic structure, the preparation method, and the formation mechanism of the eutectic EBC layer on the silicon carbide substrate are summarized. Al2O3-HfO2 eutectic EBC film is prepared by optical zone melting method on the silicon carbide substrate. At high t...
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Series: | Journal of Nanomaterials |
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doaj-07a392be464745558116193cf7a449da2020-11-24T22:13:51ZengHindawi LimitedJournal of Nanomaterials1687-41101687-41292015-01-01201510.1155/2015/318278318278Formation of Al2O3-HfO2 Eutectic EBC Film on Silicon Carbide SubstrateKyosuke Seya0Shunkichi Ueno1Byung-Koog Jang2College of Engineering, Nihon University, Koriyama, Fukushima 963-8642, JapanCollege of Engineering, Nihon University, Koriyama, Fukushima 963-8642, JapanNational Institute for Materials Science, Tsukuba, Ibaraki 305-0047, JapanThe formation mechanism of Al2O3-HfO2 eutectic structure, the preparation method, and the formation mechanism of the eutectic EBC layer on the silicon carbide substrate are summarized. Al2O3-HfO2 eutectic EBC film is prepared by optical zone melting method on the silicon carbide substrate. At high temperature, a small amount of silicon carbide decomposed into silicon and carbon. The components of Al2O3 and HfO2 in molten phase also react with the free carbon. The Al2O3 phase reacts with free carbon and vapor species of AlO phase is formed. The composition of the molten phase becomes HfO2 rich from the eutectic composition. HfO2 phase also reacts with the free carbon and HfC phase is formed on the silicon carbide substrate; then a high density intermediate layer is formed. The adhesion between the intermediate layer and the substrate is excellent by an anchor effect. When the solidification process finished before all of HfO2 phase is reduced to HfC phase, HfC-HfO2 functionally graded layer is formed on the silicon carbide substrate and the Al2O3-HfO2 eutectic structure grows from the top of the intermediate layer.http://dx.doi.org/10.1155/2015/318278 |
collection |
DOAJ |
language |
English |
format |
Article |
sources |
DOAJ |
author |
Kyosuke Seya Shunkichi Ueno Byung-Koog Jang |
spellingShingle |
Kyosuke Seya Shunkichi Ueno Byung-Koog Jang Formation of Al2O3-HfO2 Eutectic EBC Film on Silicon Carbide Substrate Journal of Nanomaterials |
author_facet |
Kyosuke Seya Shunkichi Ueno Byung-Koog Jang |
author_sort |
Kyosuke Seya |
title |
Formation of Al2O3-HfO2 Eutectic EBC Film on Silicon Carbide Substrate |
title_short |
Formation of Al2O3-HfO2 Eutectic EBC Film on Silicon Carbide Substrate |
title_full |
Formation of Al2O3-HfO2 Eutectic EBC Film on Silicon Carbide Substrate |
title_fullStr |
Formation of Al2O3-HfO2 Eutectic EBC Film on Silicon Carbide Substrate |
title_full_unstemmed |
Formation of Al2O3-HfO2 Eutectic EBC Film on Silicon Carbide Substrate |
title_sort |
formation of al2o3-hfo2 eutectic ebc film on silicon carbide substrate |
publisher |
Hindawi Limited |
series |
Journal of Nanomaterials |
issn |
1687-4110 1687-4129 |
publishDate |
2015-01-01 |
description |
The formation mechanism of Al2O3-HfO2 eutectic structure, the preparation method, and the formation mechanism of the eutectic EBC layer on the silicon carbide substrate are summarized. Al2O3-HfO2 eutectic EBC film is prepared by optical zone melting method on the silicon carbide substrate. At high temperature, a small amount of silicon carbide decomposed into silicon and carbon. The components of Al2O3 and HfO2 in molten phase also react with the free carbon. The Al2O3 phase reacts with free carbon and vapor species of AlO phase is formed. The composition of the molten phase becomes HfO2 rich from the eutectic composition. HfO2 phase also reacts with the free carbon and HfC phase is formed on the silicon carbide substrate; then a high density intermediate layer is formed. The adhesion between the intermediate layer and the substrate is excellent by an anchor effect. When the solidification process finished before all of HfO2 phase is reduced to HfC phase, HfC-HfO2 functionally graded layer is formed on the silicon carbide substrate and the Al2O3-HfO2 eutectic structure grows from the top of the intermediate layer. |
url |
http://dx.doi.org/10.1155/2015/318278 |
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