Performance of AlGaN/GaN Heterostructure Field-Effect Transistors for High-Frequency and High-Power Electronics

Performance of AlGaN/GaN Heterostructure Field-Effect Transistors for High-Frequency and High-Power Electronics

Preparation and properties of GaN-based heterostructure field-effect transistors (HFETs) for high-frequency and high-power applications are studied in this work. Performance of unpassivated and SiO2 passivated AlGaN/GaN HFETs, as well as passivated SiO2/AlGaN/GaN MOSHFETs (metal-oxide-semicondutor H...

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Bibliographic Details
Main Authors: Peter Kordos, Jan Bernat, Gero Heidelberger, Michel Marso
Format: Article
Language:English
Published: VSB-Technical University of Ostrava 2005-01-01
Series:Advances in Electrical and Electronic Engineering
Subjects:
transistors
hfet
frequency
power
sio2.
Online Access:http://advances.utc.sk/index.php/AEEE/article/view/490

Internet

http://advances.utc.sk/index.php/AEEE/article/view/490

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