Investigation of (111) wafers and comparison with (100) substrates
In the last decade, Si(100) has been used as a suitable substrate in field effect transistors. Some issues such as leakage current and tunneling current through the ultrathin films have been increased with shrinking the electronic devices – particularly, field effect transistors – to nanoscale, whi...
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| Format: | Article |
| Language: | English |
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Isfahan University of Technology
2012-06-01
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| Series: | Iranian Journal of Physics Research |
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| Online Access: | http://ijpr.iut.ac.ir/browse.php?a_code=A-10-1-569&slc_lang=en&sid=1 |