Silicon dots films deposited by spin-coating as a generated carrier addition layer of third generation photovoltaics

In this work, silicon ink composing of silicon powder and zinc oxide solution was formulated and spin-coated on quartz and n/p-Si substrates followed by drying the films under atmosphere at the temperature of 550 ​°C. The results showed that this top-addition layer could be the highly promising laye...

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Bibliographic Details
Main Authors: Thipwan Fangsuwannarak, Supanut Laohawiroj, Peerawoot Rattanawichai, Kamonchanok Mekmork, Warakorn Limsiri, Rungrueang Phatthanakun
Format: Article
Language:English
Published: Elsevier 2021-04-01
Series:Progress in Natural Science: Materials International
Subjects:
Online Access:http://www.sciencedirect.com/science/article/pii/S1002007120305736