Effect of N doping on Tl2Ga2S3Se single crystals: Thermoluminescence characterization of defect centers
Thermoluminescence study on nitrogen doped Tl2Ga2S3Se single crystals was achieved by performing the experiments with different stopping temperatures of 10−24 K and various heating rates between 0.4 and 1.2 K/s below room temperature. Thermoluminescence peak with peak maximum temperature of 54 K was...
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| Format: | Article |
| Language: | English |
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Anadolu University
2018-03-01
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| Series: | Anadolu University Journal of Science and Technology. A : Applied Sciences and Engineering |
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| Online Access: | http://dergipark.gov.tr/aubtda/issue/36292/332583?publisher=anadolu |