Boron-Proton Nuclear-Fusion Enhancement Induced in Boron-Doped Silicon Targets by Low-Contrast Pulsed Laser

Boron-Proton Nuclear-Fusion Enhancement Induced in Boron-Doped Silicon Targets by Low-Contrast Pulsed Laser

We show that a spatially well-defined layer of boron dopants in a hydrogen-enriched silicon target allows the production of a high yield of alpha particles of around 10^{9} per steradian using a nanosecond, low-contrast laser pulse with a nominal intensity of approximately 3×10^{16}  W cm^{−2}. This...

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Bibliographic Details
Main Authors: A. Picciotto, D. Margarone, A. Velyhan, P. Bellutti, J. Krasa, A. Szydlowsky, G. Bertuccio, Y. Shi, A. Mangione, J. Prokupek, A. Malinowska, E. Krousky, J. Ullschmied, L. Laska, M. Kucharik, G. Korn
Format: Article
Language:English
Published: American Physical Society 2014-08-01
Series:Physical Review X
Online Access:http://doi.org/10.1103/PhysRevX.4.031030

Internet

http://doi.org/10.1103/PhysRevX.4.031030

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