Van der Waals Epitaxy of III-Nitrides and Its Applications
III-nitride semiconductors have wide bandgap and high carrier mobility, making them suitable candidates for light-emitting diodes (LEDs), laser diodes (LDs), high electron mobility transistors (HEMTs) and other optoelectronics. Compared with conventional epitaxy technique, van der Waals epitaxy (vdW...
| Main Authors: | , , , , , |
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| Format: | Article |
| Language: | English |
| Published: |
MDPI AG
2020-08-01
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| Series: | Materials |
| Subjects: | |
| Online Access: | https://www.mdpi.com/1996-1944/13/17/3835 |