IGBT Dynamic Loss Reduction through Device Level Soft Switching
Due to its low conduction loss, hence high current ratings, as well as low cost, Silicon Insulated Gate Bipolar Transistor (Si IGBT) is widely used in high power applications. However, its switching frequency is generally low because of relatively large switching losses. Silicon carbide Metal-Oxide-...
| Main Authors: | , , , , |
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| Format: | Article |
| Language: | English |
| Published: |
MDPI AG
2018-05-01
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| Series: | Energies |
| Subjects: | |
| Online Access: | http://www.mdpi.com/1996-1073/11/5/1182 |