Design and analysis of single- ended robust low power 8T SRAM cell
This paper is based on the observation of 8T single ended static random access memory (SRAM) and two techniques for reducing the sub threshold leakage current, power consumption are examined. In the first technique, effective supply voltage and ground node voltages are changed using a dynamic variab...
| Main Authors: | , |
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| Format: | Article |
| Language: | English |
| Published: |
EDP Sciences
2016-01-01
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| Series: | MATEC Web of Conferences |
| Online Access: | http://dx.doi.org/10.1051/matecconf/20165701005 |