Laser-Induced Thermal Stresses in Dense and Porous Silicon Dioxide Films

Laser-Induced Thermal Stresses in Dense and Porous Silicon Dioxide Films

The laser-induced thermal stresses in silicon dioxide films are calculated using molecular dynamics simulations. The absorption of the laser energy is simulated by the linear temperature growth from room temperature to 1300 K in a time equal to the laser pulse duration. The maximum values of stresse...

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Bibliographic Details
Main Authors: Fedor Vasilievich Grigoriev, Vladimir Borisovich Sulimov, Alexander Vladimirovich Tikhonravov
Format: Article
Language:English
Published: MDPI AG 2021-03-01
Series:Coatings
Subjects:
thin films
laser-induced damage
molecular dynamics
silicon dioxide
stresses
Online Access:https://www.mdpi.com/2079-6412/11/4/394

Internet

https://www.mdpi.com/2079-6412/11/4/394

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