Floating Ni Capping for High-Mobility p-Channel SnO Thin-Film Transistors

Floating Ni Capping for High-Mobility p-Channel SnO Thin-Film Transistors

We utilized Ni as a floating capping layer in p-channel SnO thin-film transistors (TFTs) to improve their electrical performances. By utilizing the Ni as a floating capping layer, the p-channel SnO TFT showed enhanced mobility as high as 10.5 cm<sup>2</sup>·V<sup>−1</sup>·s&l...

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Bibliographic Details
Main Authors:	Min-Gyu Shin, Kang-Hwan Bae, Hyun-Seok Cha, Hwan-Seok Jeong, Dae-Hwan Kim, Hyuck-In Kwon
Format:	Article
Language:	English
Published:	MDPI AG 2020-07-01
Series:	Materials
Subjects:	p-channel SnO thin-film transistor floating Ni capping layer high mobility bulk channel percolation conduction
Online Access:	https://www.mdpi.com/1996-1944/13/14/3055

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