Floating Ni Capping for High-Mobility p-Channel SnO Thin-Film Transistors
We utilized Ni as a floating capping layer in p-channel SnO thin-film transistors (TFTs) to improve their electrical performances. By utilizing the Ni as a floating capping layer, the p-channel SnO TFT showed enhanced mobility as high as 10.5 cm<sup>2</sup>·V<sup>−1</sup>·s&l...
| Main Authors: | , , , , , |
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| Format: | Article |
| Language: | English |
| Published: |
MDPI AG
2020-07-01
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| Series: | Materials |
| Subjects: | |
| Online Access: | https://www.mdpi.com/1996-1944/13/14/3055 |