High-Frequency Low-Current Second-Order Bandpass Active Filter Topology and Its Design in 28-nm FD-SOI CMOS

High-Frequency Low-Current Second-Order Bandpass Active Filter Topology and Its Design in 28-nm FD-SOI CMOS

Fully Depleted Silicon on Insulator (FD-SOI) CMOS technology offers the possibility of circuit performance optimization with reduction of both topology complexity and power consumption. These advantages are fully exploited in this paper in order to develop a new topology of active continuous-time se...

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Bibliographic Details
Main Authors: Andrea Ballo, Alfio Dario Grasso, Salvatore Pennisi, Chiara Venezia
Format: Article
Language:English
Published: MDPI AG 2020-09-01
Series:Journal of Low Power Electronics and Applications
Subjects:
bandpass filter
RF
CMOS
FD-SOI
quality factor
low current
Online Access:https://www.mdpi.com/2079-9268/10/3/27

Internet

https://www.mdpi.com/2079-9268/10/3/27

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