Ultra-High-Efficiency Writing in Voltage-Control Spintronics Memory (VoCSM): The Most Promising Embedded Memory for Deep Learning

Ultra-High-Efficiency Writing in Voltage-Control Spintronics Memory (VoCSM): The Most Promising Embedded Memory for Deep Learning

Our new proposal of voltage-control spintronics memory (VoCSM) in which spin-orbit torque in conjunction with the voltage-control-magnetic-anisotropy effect works as the writing principle showed small switching current of <inline-formula> <tex-math notation="LaTeX">$37~\mu \tex...

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Bibliographic Details
Main Authors: Y. Ohsawa, H. Yoda, N. Shimomura, S. Shirotori, S. Fujita, K. Koi, A. Buyandalai, S. Oikawa, M. Shimizu, Y. Kato, T. Inokuchi, H. Sugiyama, M. Ishikawa, K. Ikegami, S. Takaya, A. Kurobe
Format: Article
Language:English
Published: IEEE 2018-01-01
Series:IEEE Journal of the Electron Devices Society
Subjects:
Magnetic memory
nonvolatile memory
magnetic tunneling
magnetic devices
learning (artificial intelligence)
Nanopatterning
Online Access:https://ieeexplore.ieee.org/document/8531691/

Internet

https://ieeexplore.ieee.org/document/8531691/

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