A universal automatic and self‐powered gate driver power supply for normally‐ON SiC JFETs
Abstract Normally‐ON silicon carbide junction‐field‐effect transistors have a simple design and exhibit advantageous performance in terms of losses, elevated junction temperatures and high switching frequencies. However, under a loss of power to their gate, normally‐ON junction‐field‐effect transist...
| Main Authors: | , |
|---|---|
| Format: | Article |
| Language: | English |
| Published: |
Wiley
2021-08-01
|
| Series: | IET Power Electronics |
| Online Access: | https://doi.org/10.1049/pel2.12151 |