Effect of growth temperature on defects in epitaxial GaN film grown by plasma assisted molecular beam epitaxy
We report the effect of growth temperature on defect states of GaN epitaxial layers grown on 3.5 μm thick GaN epi-layer on sapphire (0001) substrates using plasma assisted molecular beam epitaxy. The GaN samples grown at three different substrate temperatures at 730, 740 and 750 °C were characterize...
| Main Authors: | , , , , , , , , |
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| Format: | Article |
| Language: | English |
| Published: |
AIP Publishing LLC
2014-02-01
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| Series: | AIP Advances |
| Online Access: | http://dx.doi.org/10.1063/1.4866445 |