Microstructure and Dielectric Properties of LPCVD/CVI-SiBCN Ceramics Annealed at Different Temperatures

Microstructure and Dielectric Properties of LPCVD/CVI-SiBCN Ceramics Annealed at Different Temperatures

SiBCN ceramics were introduced into porous Si3N4 ceramics via a low-pressure chemical vapor deposition and infiltration (LPCVD/CVI) technique, and then the composite ceramics were heat-treated from 1400 °C to 1700 °C in a N2 atmosphere. The effects of annealing temperatures on microstructure, phase...

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Bibliographic Details
Main Authors: Jianping Li, Mingxi Zhao, Yongsheng Liu, Nan Chai, Fang Ye, Hailong Qin, Laifei Cheng, Litong Zhang
Format: Article
Language:English
Published: MDPI AG 2017-06-01
Series:Materials
Subjects:
siliconboron carbonitride ceramic
dielectric properties
electromagnetic wave absorbing properties
heat treatment
chemical vapor deposition and infiltration
Online Access:http://www.mdpi.com/1996-1944/10/6/655

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http://www.mdpi.com/1996-1944/10/6/655

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