Piezotronic AlGaN nanowire Schottky junctions grown on a metal substrate

Piezotronic AlGaN nanowire Schottky junctions grown on a metal substrate

The non-centrosymmetric crystal structures of polar-semiconductors comprising GaN, InN, AlN, and ZnO intrigued the scientific community in investigating their potential for a strain-induced nano-energy generation. The coupled semiconducting and piezoelectric properties produce a piezo-potential that...

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Bibliographic Details
Main Authors: Latifah Al-Maghrabi, Chen Huang, Davide Priante, Meng Tian, Jung-Wook Min, Chao Zhao, Huafan Zhang, Ram Chandra Subedi, Hala H. Alhashim, Haiding Sun, Tien Khee Ng, Boon S. Ooi
Format: Article
Language:English
Published: AIP Publishing LLC 2020-05-01
Series:AIP Advances
Online Access:http://dx.doi.org/10.1063/5.0008112

Internet

http://dx.doi.org/10.1063/5.0008112

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