Compact Modeling of Distributed Effects in 2-D Vertical Tunnel FETs and Their Impact on DC and RF Performances
In this paper, distributed effects along the channel are investigated for 2-D vertical tunnel FETs by developing a model based on a succession of unit cells along the channel, each of which includes lateral FET conduction and vertical tunnel conduction components. The distributed model shows that th...
| Main Authors: | , |
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| Format: | Article |
| Language: | English |
| Published: |
IEEE
2017-01-01
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| Series: | IEEE Journal on Exploratory Solid-State Computational Devices and Circuits |
| Subjects: | |
| Online Access: | https://ieeexplore.ieee.org/document/7858682/ |