Low bias electron transport properties of the graphene-Ge2Sb2Te5 heterostructure device

Low bias electron transport properties of the graphene-Ge2Sb2Te5 heterostructure device

We explore the performance improvement of ultra-scaled phase-change memory (PCM) device with graphene- Ge2Sb2Te5 (GST) heterostructure by means of first-principle simulations of electron transport. We compare the tunneling probability of single-barrier(SB) and double barrier(DB) heterostructures and...

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Bibliographic Details
Main Authors: Ali Roohforouz, Aliasghar Shokri
Format: Article
Language:English
Published: Elsevier 2020-03-01
Series:Results in Physics
Subjects:
Density functional theory
Device scaling
Phase change memory (PCM)
Metal induced gap (MIG)
Conductance
Non-equilibrium Green’s function (NEGF)
Online Access:http://www.sciencedirect.com/science/article/pii/S2211379719329572

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http://www.sciencedirect.com/science/article/pii/S2211379719329572

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