Molecular Dynamics Simulations of Vacancy Generation and Migration near a Monocrystalline Silicon Surface during Energetic Cluster Ion Implantation

Molecular Dynamics Simulations of Vacancy Generation and Migration near a Monocrystalline Silicon Surface during Energetic Cluster Ion Implantation

The process of ion implantation often involves vacancy generation and migration. The vacancy generation and migration near a monocrystalline silicon surface during three kinds of energetic Si<sub>35</sub> cluster ion implantations were investigated by molecular dynamics simulations in th...

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Bibliographic Details
Main Authors: Guoying Liang, Haowen Zhong, Yinong Wang, Shijian Zhang, Mofei Xu, Shicheng Kuang, Jianhui Ren, Nan Zhang, Sha Yan, Xiao Yu, Gennady Efimovich Remnev, Xiaoyun Le
Format: Article
Language:English
Published: MDPI AG 2020-02-01
Series:Coatings
Subjects:
molecular dynamics
vacancy
silicon
cluster
implantation
Online Access:https://www.mdpi.com/2079-6412/10/2/146

Internet

https://www.mdpi.com/2079-6412/10/2/146

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