Memoryless non‐linearity in B‐Substitution doped and undoped graphene FETs: A comparative investigation
Abstract An accurate electrical equivalent circuit model for boron‐substitution doped graphene field effect transistor (GFET) is proposed to analyse the effects of memoryless non‐linearity on transconductance. The proposed equivalent circuit model is verified with the simulated results of an industr...
| Main Authors: | , |
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| Format: | Article |
| Language: | English |
| Published: |
Wiley
2021-10-01
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| Series: | IET Circuits, Devices and Systems |
| Online Access: | https://doi.org/10.1049/cds2.12059 |