Three-level GaN inverter with SiC diodes for a possible three-phase high power solution

Three-level GaN inverter with SiC diodes for a possible three-phase high power solution

GaN device is a potential alternative to SiC as a wide band gap device. At present, there are almost no high-voltage GaN devices above 650 V, which makes an inverter design difficult for three-phase input using the standard two-level (2L) inverters. Therefore, at present, a three-level (3L) inverter...

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Bibliographic Details
Main Authors:	F. Aguilar Vega, N. Mukherjee, R. Carter, J. Fuerst, F. Diepold
Format:	Article
Language:	English
Published:	Wiley 2019-05-01
Series:	The Journal of Engineering
Subjects:	gallium compounds III-V semiconductors invertors wide band gap semiconductors semiconductor diodes semiconductor device models silicon compounds SiC diodes three-phase high power solution GaN device wide band gap device high-voltage GaN devices two-level inverter design limited switching frequency power loss medium-to-high-power level hard switched GaN inverter three-phase input applications three-level GaN inverter 2L structure voltage 700.0 V voltage 400.0 V voltage 480.0 V SiC GaN
Online Access:	https://digital-library.theiet.org/content/journals/10.1049/joe.2018.8096

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