Three-level GaN inverter with SiC diodes for a possible three-phase high power solution

Three-level GaN inverter with SiC diodes for a possible three-phase high power solution

GaN device is a potential alternative to SiC as a wide band gap device. At present, there are almost no high-voltage GaN devices above 650 V, which makes an inverter design difficult for three-phase input using the standard two-level (2L) inverters. Therefore, at present, a three-level (3L) inverter...

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Bibliographic Details
Main Authors: F. Aguilar Vega, N. Mukherjee, R. Carter, J. Fuerst, F. Diepold
Format: Article
Language:English
Published: Wiley 2019-05-01
Series:The Journal of Engineering
Subjects:
gallium compounds
III-V semiconductors
invertors
wide band gap semiconductors
semiconductor diodes
semiconductor device models
silicon compounds
SiC diodes
three-phase high power solution
GaN device
wide band gap device
high-voltage GaN devices
two-level inverter design
limited switching frequency
power loss
medium-to-high-power level
hard switched GaN inverter
three-phase input applications
three-level GaN inverter
2L structure
voltage 700.0 V
voltage 400.0 V
voltage 480.0 V
SiC
GaN
Online Access:https://digital-library.theiet.org/content/journals/10.1049/joe.2018.8096

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https://digital-library.theiet.org/content/journals/10.1049/joe.2018.8096

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